MPSH11
MPSH11 / MMBTH11
Discrete POWER & Signal Technologies
MMBTH11
E C BE
TO-92 SOT-23
Mark: 3G
NPN RF Transistor
This device is designed for mon-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 m A range to 300 MHz, and low frequency drift mon-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings-
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 30 3.0 50 -55 to +150
Units
V V V m A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications...
