MURP810 Description
MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and...
MURP810 Key Features
- Ultrafast with Soft Recovery
- Operating Temperature
- Reverse Voltage
- Avalanche Energy Rated
- Planar Construction
MURP810 Applications
- Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns