Fairchild Semiconductor N303AS
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.| Part No. | N303AS |
|---|---|
| Datasheet | N303AS Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Fast switching● rDS(ON) = 0.0026Ω (Typ), VGS = 10V
● rDS(ON) = 0.004Ω (Typ), VGS = 4.5V
● Qg (Typ) = 61nC, VGS = 5V
● Qgd (Typ) = 17nC
● CISS (Typ) = 7000pF
APPLICATIONS
● DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE G DRAIN (FLANGE) D TO-220AB TO-263AB TO-262AB S MOSFETMAXIMUM RATINGS
TC= 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above Operating and Storage Temperature 75 75 25 Figure 4 215 1.43 -55 to 175 W W/oC o Ratings 30 ±20 Units V V A A A C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar...
