NDS9400A Datasheet PDF | Fairchild Semiconductor

Fairchild Semiconductor NDS9400A

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Part No.	NDS9400A
Datasheet	NDS9400A Download
Manufacturer	Fairchild Semiconductor
Description	Single P-Channel MOSFET
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GENERAL DESCRIPTION

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

FEATURES

-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Rugged and reliable. ________________________________________________________________________________ 5 6 4 3 7 8 2 1

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A= 25°C unless otherwise noted NDS9400A -30 ± 20 (Note 1a) Units V V A ± 3.4 ± 10 (Note 1a) (Note 1b) (Note 1c) 2.5 1.2 1 -55 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 1997 Fairchild Semiconductor Corpo...