NDS9945 Datasheet PDF | Fairchild Semiconductor

Fairchild Semiconductor NDS9945

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Part No.	NDS9945
Datasheet	NDS9945 Download
Manufacturer	Fairchild Semiconductor
Description	Dual N-Channel MOSFET
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GENERAL DESCRIPTION

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

FEATURES

3.5 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S ND 45 99 S2 G1 SO-8 pin 1 S1

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted NDS9945 60 ±20 (Note 1a) Units V V A 3.5 10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.6 1 0.9 -55 to 150 °C TJ,TSTG RθJA RθJC Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-...