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2N7052 / 2N7053 / NZT7053
Discrete POWER & Signal Technologies
2N7052
2N7053
NZT7053
C
E C B
TO-92
E C B E
C
TO-226
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
100 100 12 1.5 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NZT7053 Datasheet
