P12N50
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
- Low gate charge ( Typ. 22nC)
- Low Crss ( Typ. 11pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
