Fairchild Semiconductor P17N40
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | P17N40 |
|---|---|
| Datasheet | P17N40 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel QFET MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A● Low Gate Charge (Typ. 45 nC)
● Low Crss (Typ. 30 pF)
● 100% Avalanche Tested * 6 6 * ; 6 ; !7 9 * 1 , -28 3 1 , %))8 3 9 : * 9 '! ; '! + ! '! ; 9 = + ! !7 9 1 , -28 3 " ! -28 + @ %7A 2 +θ +θ +θ + < + = + < ' " ! " !" ! " " ! ()) %& %) % &( ± 4) %))) %& %. (2 %.) % 42 22 ?%2) 4)) ) .( )2 &- 2 * ' ' ' * < ' < *7 > >78 8 8 8 > 8 > 8 > ©2000 Fairchild Semiconductor Corporation FQP17N40 Rev. C0 FQP17N40 N-Channel MOSFET B* ∆B* 7 ∆ B = * B = * * , ) * 6 , -2) µ' ()) 6 , -2) µ' + -28 ) (( 6 6 6 C : * : B 0 = : B 0 = + ! * , ()) * * , ) * * , 4-) * , %-28 * , 4) * * , ) * * , 4) * * , ) * % %) %)) %)) * *78 µ' µ' ' ' * : * + + * , * 6 , -2) µ' 4 ) 2) * * , %) * 6 , A ) ' ) -% ) -. Ω * , 2) * 6 , A ) ' %4 6 + ! * , -2 * * , ) * , % ) D# %A)) -4)) -.) 42) 4) () + F : F : F : * , -)) * 6 , %. - ' + , -2 Ω () E) %A2 4A) E) %E) %)2 --) * , 4-) * 6 , %. - ' (2 &) * , %) * %% ( -% .
