P17N40
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Key Features
- 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- 7∆
- 6,-2)µ'
- ,%-28
- :
- 6,-2)µ'
- 6,A )'
