Fairchild Semiconductor P18N50
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.| Part No. | P18N50 |
|---|---|
| Datasheet | P18N50 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel UniFET MOSFET |
| Buy | Stock & Price |
FEATURES
● 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V● Low gate charge ( typical 45 nC)
● Low Crss ( typical 25 pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability UniFET
DESCRIPTION
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series SABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP18N50 500 18 10.8 72 ±30 945 18 FDPF18N50 18 * 10.8 ∗ 72 ∗ Unit V A A A V mJ A mJ V/ns 23.5 4.5 235 1.88 -55 to +150 300 38.5 0.3 W W/°C °C °C Operating and Storage Temperature Ra...
