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P5N80 Datasheet Fqp5n80

Manufacturer: Fairchild (now onsemi)

Overview: FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V.
  • Low gate charge ( typical 25 nC).
  • Low Crss ( typical 11 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curre.

More Datasheets from Fairchild (now onsemi)

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