P5N80
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
- Low gate charge ( typical 25 nC)
- Low Crss ( typical 11 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S
