Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V.
- Low gate charge ( typical 25 nC).
- Low Crss ( typical 11 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
GDS
TO-220
FQP Series
D
!
"
35
G!
" "
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Curre.
P5N80 Datasheet
