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P60N03L - EQP60N03L

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 60A, 30V. RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 18.5 nC) Low Crss ( typical 155 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series http://www. DataSheet4U. net/ ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Vol.

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Datasheet Details

Part number P60N03L
Manufacturer Fairchild Semiconductor
File Size 715.14 KB
Description EQP60N03L
Datasheet download datasheet P60N03L Datasheet
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    FQP60N03L May 2001 QFET FQP60N03L 30V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 60A, 30V. RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 18.
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