P7N80C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
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- - 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 n C) Low Crss ( typical 10 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G DS
TO-220
FQP Series
GD S
.Data Sheet.net/
TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQP7N80C 800 6.6 4.2 26.4
FQPF7N80C 6.6
- 4.2
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