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PCGA160T65NF8 - IGBT

Key Features

  • AEC-Q101 Qualified.
  • Max Junction Temperature 175°C.
  • Positive Temperature Co-efficient.
  • Ease of Paralleling.
  • Short Circuit Rated.
  • Very Low Saturation Voltage: VCE(SAT) = 1.6V (Typ. ) @ IC = 160A.
  • Optimized for Motor Control.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCGA160T65NF8 650V, 160A Field Stop Trench IGBT PCGA160T65NF8 650 V, 160 A Field Stop Trench IGBT Features „ AEC-Q101 Qualified „ Max Junction Temperature 175°C „ Positive Temperature Co-efficient „ Ease of Paralleling „ Short Circuit Rated „ Very Low Saturation Voltage: VCE(SAT) = 1.6V (Typ.) @ IC = 160A „ Optimized for Motor Control Applications May 2016 Applications „ Automotive Traction Modules „ General Power Modules Ordering Information P/N Packing Die Size Emitter Attach Area Gate pad Attach Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max. Possible Die Per Wafer ©2016 Fairchild Semiconductor Corporation PCGA160T65NF8 Rev1.