PCGA160T65NF8 Datasheet PDF

FEATURES

„ AEC-Q101 Qualified „ Max Junction Temperature 175°C „ Positive Temperature Co-efficient „ Ease of Paralleling „ Short Circuit Rated „ Very Low Saturation Voltage: VCE(SAT) = 1.6V (Typ.) @ IC = 160A „ Optimized for Motor Control

APPLICATIONS

May 2016

APPLICATIONS

„ Automotive Traction Modules „ General Power Modules Ordering Information P/N Packing Die Size Emitter Attach Area Gate pad Attach Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max. Possible Die Per Wafer ©2016 Fairchild Semiconductor Corporation PCGA160T65NF8 Rev1.0 PCGA160T65NF8 Wafer (Sawn-On-Foil) mils μm 276 X 394 7,000 X 10,000 110 x 340 111 x 349 2,803 x 8,641 (Left) 2,813 x 8,862 (Right) 28 x 35 700 x 900 3 78 Al (0.5% Cu, 0.8% Si) Al/VNi/Ag Silicon Nitride Plus Polymide 200mm 327 1 PCGA160T65NF8 650V, 160A Field Stop Trench IGBT

ABSOLUTE MAXIMUM RATINGS

(TVJ= 25oC unless otherwise noted) Symbol Parameter VCES VGES IC ICM SCWT Collector to Emitter Voltage Gate-to-Emmiter Voltage...