PN200
PN200 / MMBT200 / PN200A / MMBT200A
Discrete POWER & Signal Technologies
PN200 PN200A
MMBT200 MMBT200A
TO-92
SOT-23
Mark: N2 / N2A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 m A. Sourced from Process 68.
Absolute Maximum Ratings-
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
45 75 6.0 500 -55 to +150
Units
V V V m A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C...
