PN4249 Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 m A. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 60 60 5.0 500 -55 to +150 Units V V V m A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4249 625 5.0 83.3 200 Units m W m W/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage- Collector-Emitter Breakdown Voltage- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 5.0 m A, IB = 0 I C = 10 µA, I B = 0 I C = 10 µA, I E = 0 I E = 10 µA, IC = 0 VCB = 40 V, I E = 0 VEB = 3.0 V, I C = 0 60 60 60 5.0 10 20 V V V V n A n A ON CHARACTERISTICS- h FE VCE(sat ) DC Current Gain Collector-Emitter Saturation Voltage VCE = 5.0 V, I C = 100 µA IC = 10 m A, IB = 0.5 m A 100 300 0.25...