PN4250A Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 m A. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings- TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 500 -55 to +150 - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max PN4250A 625 5.0 83.3 200 Units V V V m A °C Units m W m W/°C °C/W °C/W © 1997 Fairchild Semiconductor...