PN4275 Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 m A. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.5 200 -55 to +150 Units V V V m A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4275 350 2.8 125 357 Units m W m W/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES IB ICBO Collector-Emitter Breakdown Voltage- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 10 m A, I B = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 I C = 10 µ A, IB = 0 VCE = 20 V VCB = 20 V, IE = 0, TA = 65 °C 15 40 4.5 40 0.4 10 V V V V µA µA ON CHARACTERISTICS- h FE DC Current Gain IC = 10 m A, VCE = 1.0 V IC = 30 m A, VCE = 0.4 V IC = 100 m A, VCE = 1.0 V IC = 10 m A, IB = 1.0 m A IC = 30 m A, IB = 3.0 m A IC = 10 m A, IB = 3.3 m A IC = 100 m A, I B = 10 m A IC = 10 m A, IB = 1.0 m A,...