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PZTA13 - NPN Darlington Transistor

General Description

TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102m

Key Features

  • 0.000 8.4.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MPSA13 / MMBTA13 / PZTA13 MPSA13 MMBTA13 C PZTA13 C E C B E C B TO-92 E SOT-23 Mark: 1M B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 30 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.