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MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
PZTA65
C BE
TO-92
C
SOT-23
Mark: 2W
E B
C
SOT-223
C B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
30
VCBO VEBO IC
Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
30 10 1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PZTA65 Datasheet
