QEC113 Datasheet | Fairchild Semiconductor

DESCRIPTION The QEC11X is an 940 nm Ga As LED encapsulated in a clear peach tinted, plastic T-1 package. FEATURES - D= 940 nm - Chip material = Ga As - Package type: T-1 (3mm) - Matched Photosensor: QSC112 - Narrow Emission Angle, 24° - High Output Power - Package material and color: Clear, peach tinted plastic  2001 Fairchild Semiconductor Corporation DS300334 5/21/01 1 OF 3 .fairchildsemi. PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit °C °C °C °C m A V m W 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC112 Radiant Intensity QEC113 Rise Time Fall Time IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms VR = 5 V IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A DPE 201/2 VF IR IE IE tr tf - - - 6 14 - - 940 24 - - - - 1000 1000 - 1.5 10 30 - - - nm Deg. V µA m W/sr m W/sr ns ns .fairchildsemi. 2 OF 4 5/21/01 DS300334 PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 TYPICAL PERFORMANCE CURVES Fig.1 Normalized Radiant Intensity vs. Forward...