Fairchild Semiconductor QRB1113
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.| Part No. | QRB1113 |
|---|---|
| Datasheet | QRB1113 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● No contact surface sensing● Phototransistor output
● Focused for sensing specular reflection
● Daylight filter on photosensor
● Dust cover © 2002 Fairchild Semiconductor Corporation Page 1 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Reverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 4.5 20 100 Units °C °C °C °C mA V mW V V mA mW QRB1114 Continuous Forward Current Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing.
