Fairchild Semiconductor QRB1133
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.| Part No. | QRB1133 |
|---|---|
| Datasheet | QRB1133 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Phototransistor output● High Sensitivity
● Low cost plastic housing
● #26 AWG, 24 inch PVC wire termination
● Infrared transparent plastic covers for dust protection 2001 Fairchild Semiconductor Corporation DS300351 7/02/01 1 OF 4 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRB1133
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1) SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) VCEO VECO IC PD 30 50 20 100 V V mA mW IF VR PD 50 5 100 mA V mW (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec Units °C °C °C °C QRB1134 NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents.
