Fairchild Semiconductor QRE00034
The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by side on a converging optical axis in a black housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes in its field of view.| Part No. | QRE00034 |
|---|---|
| Datasheet | QRE00034 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | REFLECTIVE OBJECT SENSOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Phototransistor output● No contact surface sensing
● Daylight filter on the sensor
● Emitter = 940 nm 2001 Fairchild Semiconductor Corporation DS300254 9/21/01 1 OF 6 REFLECTIVE OBJECT SENSOR QRE00034
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature EMITTER Continuous Forward Current Reverse Voltage Peak Forward Current Power Dissipation(1) SENSOR Collector-Emitter Voltage Power Dissipation(1) (Flow)(2,3) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR IFP PD VCEO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 1 100 30 100 Units °C °C °C °C mA V A mW V mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25°C) SYMBOL MIN TYP MAX UNITS EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Dark Current Peak Sensitivity Wavelength COUPLED Collector Current Collector Emitter Saturation Voltage Ris...
