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QRE00034 - REFLECTIVE OBJECT SENSOR

General Description

The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by side on a converging optical axis in a black housing.

The phototransistor responds to radiation from the emitting diode only when a reflective object passes in its field of view.

Key Features

  • Phototransistor output.
  • No contact surface sensing.
  • Daylight filter on the sensor.
  • Emitter = 940 nm  2001 Fairchild Semiconductor Corporation DS300254 9/21/01 1 OF 6 www. fairchildsemi. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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REFLECTIVE OBJECT SENSOR QRE00034 PACKAGE DIMENSIONS E 0.236 (6.00) + + D E + D + 0.492 (12.50) 2 1 0.331 (8.40) 0.197 (5.00) 3 4 0.314 (8.00) SCHEMATIC 0.118 (3.00) 0.018 (0.46) SQ. (4X) 1 2 4 3 0.100 (2.54) 0.362 (9.20) NOTES: 1. Dimensions for all drawings are in inches. 2. Tolerance of ± .010 on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by side on a converging optical axis in a black housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes in its field of view.