Fairchild Semiconductor QSB363C
The QSB363C is a silicon phototransistor encapsulated in a clear transparent T-3/4 package.| Part No. | QSB363C |
|---|---|
| Datasheet | QSB363C Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● NPN Silicon Phototransistor● T-3/4 (2mm) Surface Mount Package
● Medium Wide Beam Angle, 24°
● Clear Plastic Package
● Matched Emitters: QEB363 or QEB373
● Tape & Reel Option (See Tape & Reel Specifications)
● Lead Form Options: Gullwing, Yoke, Z-Bend 2001 Fairchild Semiconductor Corporation DS300233 8/2/01 1 OF 5 SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW NOTES 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 µs, T = 10 ms. 5. D = 940 nm, GaAs.
