Datasheet4U Logo Datasheet4U.com

R8120S3S - ISL9R8120S3S

Description

The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications.

The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.

Features

  • Soft Recovery.
  • . . . . tb / ta > 5.5.
  • Fast Recovery.
  • trr < 32ns.
  • Operating Temperature.
  • 150oC.
  • Reverse Voltage.
  • . 1200V.
  • Avalanche Energy Rated.

📥 Download Datasheet

📁 Similar Datasheet

  • R8160H - 200mA 36V Input Ultra Low Supply Current VR (Nisshinbo)
  • R8160N - 200mA 36V Input Ultra Low Supply Current VR (Nisshinbo)
  • R8160S - 200mA 36V Input Ultra Low Supply Current VR (Nisshinbo)
Other Datasheets by Fairchild Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.
    Published: |