Fairchild Semiconductor RF1K49223
The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches.| Part No. | RF1K49223 |
|---|---|
| Datasheet | RF1K49223 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 2.5A/ 30V/ 0.150 Ohm/ Dual P-Channel LittleFET Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 2.5A, 30V● rDS(ON) = 0.150Ω
● Temperature Compensating PSPICE® Model
● Thermal Impedance PSPICE Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RF1K49223 PACKAGE MS-012AA BRAND RF1K49223 Symbol D1(8) D1(7) S1(1) G1(2) NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e. RF1K4922396. D2(6) D2(5) S2(3) G2(4) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 ©2002 Fairchild Semiconductor Corporation RF1K49223 Rev. B RF1K49223
ABSOLUTE MAXIMUM RATINGS
TA= 25oC Unless Otherwise Specified RF1K49223 Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
