Fairchild Semiconductor RF1S22N10SM
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
| Part No. | RF1S22N10SM |
|---|---|
| Datasheet | RF1S22N10SM Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 22A, 100V● rDS(ON) = 0.080Ω
● UIS SOA Rating Curve (Single Pulse)
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFP22N10, RF1S22N10SM Rev. B RFP22N10, RF1S22N10SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFP22N10, RF1S22N10SMS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . .
