RF1S60P03SM
Description
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- rDS(ON) = 0.027Ω
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL)
