Datasheet4U Logo Datasheet4U.com

RF1S60P03SM - 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs

Description

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 60A, 30V.
  • rDS(ON) = 0.027Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S60P03SM 60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs Intersil Corporation
RF1S630SM 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S25N06SM 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs Harris

Other Datasheets by Fairchild (onsemi)

Part Number Description
RF1S60P03 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
RF1S630SM N-Channel Power MOSFETs
RF1S640 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs
RF1S640SM 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

Full PDF Text Transcription

Click to expand full text
S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
Published: |