Fairchild Semiconductor RF1S640SM
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs
| Part No. | RF1S640SM |
|---|---|
| Datasheet | RF1S640SM Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 18A, 200V● rDS(ON) = 0.180Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speed
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF640 RF1S640 RF1S640SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND IRF640 RF1S640 RF1S640 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640, RF1S640SM Rev. B IRF640, RF1S640, RF1S640SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
