Fairchild Semiconductor RF1S9530SM
P-Channel Power MOSFETs
| Part No. | RF1S9530SM |
|---|---|
| Datasheet | RF1S9530SM Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 12A, 100V● rDS(ON) = 0.300Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263A GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF9530, RF1S9530SM Rev. B IRF9530, RF1S9530SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
