Fairchild Semiconductor RFD12N06RLESM
N-Channel UltraFET Power MOSFET
FEATURES
● Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V● Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models -
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE RFD12N06RLESM9A TO-252AA BRAND 12N6LE
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFD12N06RLESM9A UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous Continuous (TC= (TC= 25oC, 25oC, VGS VGS = = 5V) . . . . . . . 10V) (Figure .. 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .