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RFD3055LE - N-Channel Power MOSFET

Features

  • 11A, 60V.
  • rDS(ON) = 0.107Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Absolute Max.

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Full PDF Text Transcription

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Data Sheet RFD3055LE, RFD3055LESM September 2013 N-Channel Logic Level Power MOSFET 60V, 11A, 107 mΩ These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. Ordering Information PART NUMBER RFD3055LE RFD3055LESM9A PACKAGE TO-251AA TO-252AA BRAND F3055L F3055L Features • 11A, 60V • rDS(ON) = 0.
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