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RFD3055LESM Datasheet N-Channel Power MOSFET

Manufacturer: Fairchild (now onsemi)

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Overview

Data Sheet RFD3055LE, RFD3055LESM September 2013 N-Channel Logic Level Power MOSFET 60V, 11A, 107 mΩ These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.

Key Features

  • 11A, 60V.
  • rDS(ON) = 0.107Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM Rev. C0 RFD3055LE, RFD3055LESM Absolute Max.

📁 Similar Datasheet

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Intersil Corporation Logo RFD3055LESM N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD3055LE N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD3055 N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD3055SM N-Channel Power MOSFET Intersil Corporation

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