RFD3055SM Description
RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,...
RFD3055SM Key Features
- 12A, 60V
- rDS(ON) = 0.150Ω
- Temperature pensating PSPICE® Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 175oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”