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RFG30P06 - P-Channel Power MOSFET

Datasheet Summary

Features

  • 30A, 60V.
  • rDS(ON) = 0.065Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFG30P06, RFP30P06, RF1S30P06SM Rev. B R.

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Datasheet Details

Part number RFG30P06
Manufacturer Fairchild Semiconductor
File Size 392.71 KB
Description P-Channel Power MOSFET
Datasheet download datasheet RFG30P06 Datasheet
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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Ordering Information PART NUMBER PACKAGE BRAND RFG30P06 TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 NOTE: When ordering, use the entire part number.
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