RFG45N06 Overview
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in
RFG45N06 Key Features
- 45A, 60V
- rDS(ON) = 0.028Ω
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175oC Operating Temperature
