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S E M I C O N D U C T O R
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE DRAIN GATE
December 1995
Features
• 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature
DRAIN (BOTTOM SIDE METAL)
Description
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.