RFG70N06 Overview
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in
RFG70N06 Key Features
- 70A, 60V
- rDS(on) = 0.014Ω
- Temperature pensated PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve (Single Pulse)
- +175oC Operating Temperature
