Datasheet Summary
S E M I C O N D U C T O R
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL)
December 1995
Features
- 45A, 60V
- rDS(ON) = 0.028Ω
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175oC Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed...
