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RLP03N06CLE - N-Channel Power MOSFET

Key Features

  • 0.30A, 60V.
  • rDS(ON) = 6.0Ω.
  • Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC.
  • Built in Voltage Clamp.
  • Temperature Compensating PSPICE® Model.
  • 2kV ESD Protected.
  • Controlled Switching Limits EMI and RFI.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE ©2001 Fairchild.

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Full PDF Text Transcription (Reference)

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Data Sheet RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1999 File Number 3948.5 [ /Title (RLD0 3N06C LE, RLD03 N06CL ESM, RLP03 N06CL E) /Subject (0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamp ed, Logic Level N-Cha nnel Power MOSFETs) /Autho r () /Keywords (Intersil Corpo- 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads.