RMBA19500A
Overview
The RMBA19500A is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process.
- 2 Watt linear output power at 36 dBc ACPR1 for CDMA operation
- OIP3 ≥ 43 dBm at 27 and 30 dBm output
- Small Signal Gain of > 30 dB
- Small outline SMD package Absolute Ratings Symbol Vd Vg PIN TC TSTG Parameter Drain Supply Voltage1 Gate Supply Voltage (max absolute) RF Input Power (from 50Ω source) Operating Case Temperature Range Storage Temperature Range Ratings +10 -5 +5 -30 to +85 -40 to +100 Units V V dBm °C °C Electrical Characteristics2 Parameter Frequency Range Gain (Small Signal) Over 1930-1990 MHz Gain Variation Over Frequency Range Over Temperature Range Noise Figure P1dB Output Output Power @ CDMA3 PAE @ 33 dBm Pout OIP34 Drain Voltage (Vdd) Gate Voltage (VG1, 2 and VG3)5 Quiescent currents (Idq1, 2 and Idq3)5 Thermal Resistance (Channel to Case) RJC Min 1930 30 Typ Max 1990 Units MHz dB dB dB dB dBm dBm % dBm V V mA °C/W ±1.0 ±1.5 6 30 33 43 -2 180, 445 11 24 45 7.0 -0.25 Notes:
- Only under quienscent conditions-no RF applied.
- VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 50Ω. 3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885 KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
- OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-center with adjusted supply and bias conditions of Vdd = 6.5V and IdqTotal
