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RMM2080 - 2-18 GHz Wideband Variable-Gain Driver Amplifier

Description

The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability.

The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate.

Features

  • 2.
  • 18GHz Bandwidth 24dB Typical Gain ±2dB Gain Flatness 20dBm Output Power Typical Three Stages of Distributed Amplification Gain Control of up to 70dB range Dual-Gate Ion-Implanted 0.5µm FETs Chip Size: 4.14mm x 3.22mm x 0.1mm Device Absolute Ratings Symbol Vd Vg Vgd Id PIN(CW) TCASE.

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    RMM2080 May 2004 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.
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