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RMWB11001 - 11 GHZ Buffer Amp

General Description

The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications.

Key Features

  • 4 mil substrate Small-signal gain 21dB (typ. ) Saturated Power Out 19dBm (typ. ) Voltage Detector Included to Monitor Pout Chip size 2.0mm x 1.3mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd.
  • Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside.

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Full PDF Text Transcription for RMWB11001 (Reference)

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RMWB11001 www.DataSheet4U.com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11...

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he RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB11001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features • • • • • 4 mil substrate Small-signal gain 21dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.0mm