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SB360 - Schottky Rectifiers

Download the SB360 datasheet PDF. This datasheet also covers the SB320 variant, as both devices belong to the same schottky rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 3.0 ampere operation at TA = 75°C with no thermal runaway.
  • For use in low voltage, high frequency inverters free wheeling, and polarity protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SB320-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SB360 Schottky Rectifier SIRECT
SB360 SCHOTTKY BARRIER RECTIFIERS PAN JIT
SB360 SCHOTTKY BARRIER RECTIFIER DIODE EIC
SB360 3.0A SCHOTTKY BARRIER RECTIFIER Diodes
SB360 MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER GOOD-ARK Electronics

Other Datasheets by Fairchild (now onsemi)

Part Number Description
SB3100 Schottky Rectifiers
SB320 Schottky Rectifiers
SB330 Schottky Rectifiers
SB340 Schottky Rectifiers
SB350 Schottky Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SB320-SB3100 SB320 - SB3100 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter VRRM IF(AV) IFSM Tstg TJ Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature Value 320 330 340 350 360 380 3100 20 30 40 50 60 80 100 3.0 80 -65 to +125 -65 to +125 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.