Datasheet Summary
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Advanced Power MOSFET
Features
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 Ω (Typ.)
BVDSS = -200 V RDS(on) = 0.5 Ω ID = -7.6 A
TO-3PF
1 2 3
1.Gate 2. Drain 3....
