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n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ. )
1
SFW/I9520
BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 A
D2-PAK
2
o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Con.
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Advanced Power MOSFET
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n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.)
1
SFW/I9520
BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 A
D2-PAK
2
o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3.
SFI9520 Datasheet
