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SFI9640 - P-CHANNEL POWER MOSFET

Datasheet Summary

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = -200V Low RDS(ON) : 0.344 Ω (Typ. ) 1 SFW/I9640 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C).

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Datasheet Details

Part number SFI9640
Manufacturer Fairchild Semiconductor
File Size 261.82 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet SFI9640 Datasheet
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.344 Ω (Typ.) 1 SFW/I9640 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -200 -11 -7.
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