Download SFM9014 Datasheet PDF
Fairchild Semiconductor
SFM9014
FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Lower RDS(ON) : 0.362 Ω (Typ.) BVDSS = -60 V RDS(on) = 0.5 Ω ID = -1.8 A SOT-223 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) - Linear Derating Factor - o o Value -60 -1.8 -1.1 1 O 2 O 1 O 1 O 3 O Units V A A V m J A m J V/ns W W/ C o -14 ±!" 110 -1.8 0.28 -5.5 2.8 0.022 - 55 to +150 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds...