SFM9110
FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.)
BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A
SOT-223
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C)
- Linear Derating Factor
- 2 O 1 O 1 O 3 O o o
Value -100 -1.0 -0.7
1 O
Units V A A V m J A m J V/ns W W/ C o
-8.0 ±30 53 -1.0 0.25 -6.5 2.52 0.02
- 55 to +150
Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds...
