n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ. )
SFM9110
BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A
SOT-223
2
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curr.
Full PDF Text Transcription for SFM9110 (Reference)
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SFM9110. For precise diagrams, and layout, please refer to the original PDF.
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Are...
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Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.) SFM9110 BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Line
SFM9110 Datasheet
