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SFM9210 - Advanced Power MOSFET

Key Features

  • ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max. ) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ. ) SFM9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curre.

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Full PDF Text Transcription for SFM9210 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SFM9210. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Are...

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Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ.) SFM9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linea

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