SFM9210
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ.)
BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A
SOT-223
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C)
- Linear Derating Factor
- 2 O 1 O 1 O 3 O o o
Value -200 -0.5 -0.3
1 O
Units V A A V m J A m J V/ns W W/ C o
-4.0 + _ 30 133 -0.5 0.16 -5.0 1.63 0.013
- 55 to +150
Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds...
